Investigations on the Growth of AlN Heterostructures for UV Emitting Devices
نویسنده
چکیده
We report on the metalorganic vapor phase epitaxial (MOVPE) growth of AlN films on sapphire substrates. The effect of precursor flow rate and nucleation layer (NL) on the film quality was investigated. The films were characterized using AFM, XRD and PL. We could realize AlN films with very smooth surfaces and narrow symmetric XRD peaks indicating low screw/mixed type dislocation densities in the films. Moreover, PL spectra showed a very strong luminescence, confirming high crystalline quality of the optimized AlN films.
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